IJBTT

High Industrial Silicon Solar Cell Efficiency and Performance

	International Journal of Recent Engineering Science (IJRES)
	© 2016 by IJRES Journal
	Volume-3 Issue-6
	Year of Publication : 2016
	Authors : A. Habib, M. T. Ahmed, J. C. Jimeno, M. A. Rasool, M. I. Abdel-hamied
	DOI : 10.14445/23497157/IJRES-V3I6P103

How to Cite?

A. Habib, M. T. Ahmed, J. C. Jimeno, M. A. Rasool, M. I. Abdel-hamied, "High Industrial Silicon Solar Cell Efficiency and Performance," International Journal of Recent Engineering Science, vol. 3, no. 6, pp. 16-19, 2016. Crossref, https://doi.org/10.14445/23497157/IJRES-V3I6P103

Abstract
our goal is to achieve low cost effective Czochralski (Cz) silicon crystalline materials and rapid process technologies that is favorable for industry. At high temperature phosphorus diffusion silicon solar cell, we found phosphorus precipitated in the form of dead layer due to over solubility limit, Due to this layer the recombination centers appear, as a result auger recombination increase. These recombination centers increase saturation current density as a result cell Voc and Jsc decrease due to high recombination rate. At low temperature p diffusion we found that about 80- 90% P is active but at high temperature about 50-60% P is active. Emitters obtained by a single step thermal are in range of 7-8 x1019 cm -3 with sheet resistance ~ 60 Ω/□ and junction depth0.71 µm and saturation current of emitter is 130 fA/cm2 .Our target in texturing optimization work have been met, that we decrease the mount of NaOH we used and IPA, give good wafers reflectivity about 11%. The phosphorus profiles were proceed experimentally, with only pre-deposition process by adding a drive-in after introducing thermal dry oxidation step after diffusion process for various diffusion temperature. The Voc and Jsc values calculated by PC1D simulating program, using a Gaussian model with values of the emitter surface concentration Ns and sheet resistance for the corresponding values of depth junction.

Keywords
Industrial Silicon solar cell, PC1D simulating program, Phosphorus profiles, Silicon texturization.

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